Gallium arsenide and other III-V compounds are important semiconductor materials for high-efficiency solar cells and are used for single-junction thin-film solar cells and for multi-junction solar cells. Many solar cells including the latest triple and quadruple junction technology, use Germanium substrates, the whole product range benefits from years of experience in the space market and terrestrial CPV markets. 5N Plus also offers various possibilities of customized products on individual requirements.
AZUR SPACE offers triple-junction solar cells in a variety of dimensions to a wide range of customers. These triple-junction cells comprise a GaInP/GaAs/Ge on a Ge substrate. It produces a GaInP/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 30% advanced) with the end-of-life version offering first grade EOL-performance values. The cell should be combined with an external bypass diode protection.
5N Plus produces an AlInGaP/AlInGaAs/InGaAs/Ge on Ge substrate quadruple junction solar cell (efficiency class 32%). The end-of-life version (EOL) of the 4G32C - Advanced offers best-in-class power at EOL, mass and price per watt. The cell should be combined with an external bypass diode protection.
Space assemblies are space solutions with a higher integration level. Based on our high-efficiency solar cells of the 30% or 32% class, the assemblies are additionally equipped with cover glasses and interconnectors. The cell dimensions as well as the integrated bypass diode are the same as for the bare solar cells. All materials and components are space-qualified. In addition to our standard SCAs (Solar Cell Assemblies), AZUR SPACE offers various possibilities of customized solutions on individual requirements.
5N Plus diodes offer a highly reliable and well-proven protection of individual cells from negative bias in case of their possible inhomogeneous illumination in the string or damages. There are two types of bypass diodes available, both of which are space-qualified. An external Si diode, as well as a GaAs diode, is monolithically integrated in the solar cell structure.